AFGB40T65SQDN

Description

Manufacturer: onsemi
Product Category: IGBT Transistors
RoHS: Details
REACH – SVHC:
Technology: Si
Package/Case: D2PAK-3
Mounting Style: SMD/SMT
Configuration: Single
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.6 V
Maximum Gate Emitter Voltage: – 20 V, 20 V
Continuous Collector Current at 25 C: 80 A
Pd – Power Dissipation: 238 W
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Series: AFGB40T65SQDN
Qualification: AEC-Q101
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: onsemi
Continuous Collector Current Ic Max: 40 A
Gate-Emitter Leakage Current: 400 nA
Product Type: IGBT Transistors
800
Subcategory: IGBTs
Unit Weight: 2.067 g