Description
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TSDSON-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 35 A
Rds On – Drain-Source Resistance: 12.4 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 13 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 25 W
Channel Mode: Enhancement
Tradename: OptiMOS
Series: OptiMOS 3M
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Infineon Technologies
Configuration: Single
Fall Time: 2 ns
Forward Transconductance – Min: 22 S
Height: 1.1 mm
Length: 3.3 mm
Product Type: MOSFET
Rise Time: 2.2 ns
5000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 13 ns
Typical Turn-On Delay Time: 3.4 ns
Width: 3.3 mm
Part # Aliases: SP000313122 BSZ13N3MSGXT BSZ130N03MSGATMA1
Unit Weight: 38.760 mg

United Kingdom
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