IPP023N10N5 – MOSFET N-Ch 100V 120A TO220-3

Description

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 120 A
Rds On – Drain-Source Resistance: 2 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2.2 V
Qg – Gate Charge: 210 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 375 W
Channel Mode: Enhancement
Tradename: OptiMOS
Series: OptiMOS 5
Packaging: Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 29 ns
Forward Transconductance – Min: 124 S
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 26 ns
500
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 77 ns
Typical Turn-On Delay Time: 33 ns
Width: 4.4 mm
Part # Aliases: SP001120504 IPP023N10N5AKSA1
Unit Weight: 2 g