SCT2H12NZGC11

Description

Manufacturer: ROHM Semiconductor
Product Category: MOSFET
RoHS: Details
REACH – SVHC:
Technology: SiC
Mounting Style: Through Hole
Package/Case: TO-3PFM-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 1.7 kV
Id – Continuous Drain Current: 3.7 A
Rds On – Drain-Source Resistance: 1.15 Ohms
Vgs – Gate-Source Voltage: – 6 V, + 22 V
Vgs th – Gate-Source Threshold Voltage: 1.6 V
Qg – Gate Charge: 14 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 35 W
Channel Mode: Enhancement
Series: SCT2x
Packaging: Tube
Brand: ROHM Semiconductor
Configuration: Single
Fall Time: 74 ns
Forward Transconductance – Min: 0.4 s
Product: Power MOSFETs
Product Type: MOSFET
Rise Time: 21 ns
450
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: N-Channel SiC Power MOSFET
Typical Turn-Off Delay Time: 35 ns
Typical Turn-On Delay Time: 16 ns
Part # Aliases: SCT2H12NZ
Unit Weight: 11.405 g